Mechanisms of nanodot formation under focused ion beam irradiation in compound semiconductors

Focused Ion Beam Induced Nanodot, Nanocrystal and Nanofiber Growth

Ion beams focused to diameters in the range of several tens of nanometers offer an interesting opportunity for maskless processing in the nanoscale regime. Under certain sputter conditions a periodic height modulation in the form of ripples and dots on a submicron length scale develops during broad beam ion exposure as observed for semiconductor materials [1] – [4], metals [5], [6], insulator s...

Focused Ion Beam Milling of Semiconductors An imaging challenge

In recent years, the challenges confronting semiconductor engineers have increased exponentially. Not only are new semiconductors harder to design, but also harder to test and debug as a result of growing complexity, decreased feature size, and the introduction of new materials and manufacturing processes. Moreover, in today’s environment of continually shortening product life cycles, all of th...

Focused Ion Beam Lithography

Irradiation with Neutrons and Formation of Simple Radiation Defects in Semiconductors

In this research, cobalt and nickel sulfide nanoparticles (NPs) were grown on AlMCM-41 matrix by using ion exchange method. The prepared samples were irradiated by thermalized neutron that emitted from Am-Be source up to fluencies (7.9+E9n/cm2). After that, X-ray diffraction (XRD), UV-Vis spectroscopy, Fourier transform...

Effects of focused MeV ion beam irradiation on the roughness of electrochemically micromachined silicon surfaces

The authors compare the effects of focused and broad MeV ion beam irradiation on the surface roughness of silicon wafers after subsequent electrochemical anodization. With a focused beam, the roughness increases rapidly for low fluences and then slowly decreases for higher fluences, in contrast to broad beam irradiation where the roughness slowly increases with fluence. This effect is important...